The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing)
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Materials | Free Full-Text | High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors
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Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation | Semantic Scholar
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High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics - Cui - 2015 - Advanced Materials - Wiley Online Library
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Effects of high- k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO T ... - Nanoscale (RSC Publishing) DOI:10.1039/C9NR03395E
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Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials
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